Effect of the Ge Mole Fraction on the Electrical Characteristics of Single and Dual Channel Vertical Strained SiGe Impact Ionization MOSFET (VESIMOS)

Nurmin Bolong, and H.M. Zuhir, and Chan, Bun Seng and Ismail Saad, and Khairul Anuar Mohamad, and Bablu K. Ghosh, Effect of the Ge Mole Fraction on the Electrical Characteristics of Single and Dual Channel Vertical Strained SiGe Impact Ionization MOSFET (VESIMOS). Advanced Materials Research, 1107. pp. 496-501.

[img]
Preview
Text
Effect_of_the_Ge_Mole_Fraction_on_the_Electrical_Characteristics_of_Single_and_Dual_Channel_Vertical_Strained_SiGe_Impact_Ionization_MOSFET.pdf

Download (46kB) | Preview

Abstract

The effect of the Ge mole fraction in a Si1-xGex on single and dual channel Vertical Strained SiGe Impact Ionization MOSFET was successfully analyzed. It is found that the threshold voltage, breakdown voltage and sub-threshold slope of the devices was affected by the presence of the Germanium. A better performance in sub-threshold voltage of the devices was obtained for dual channel VESIMOS compared to single channel VESIMOS with a suitable amount of Germanium. Germanium has high and symmetric impact ionization rates to ensure the transition from OFF state to ON state is abrupt. With the appearance of the SiGe layer in the devices, has an advantage of the mobility enhancement of carriers in the devices operation. With the improvement of the Ge composition, it could transform VESIMOS into a new paradigm of devices which applicable to nanoelectronics with better electrical characteristics.

Item Type: Article
Uncontrolled Keywords: Breakdown Voltage, Electron Mobility, Germanium (Ge), Strained SiGe, Threshold Voltage, Vertical Strained SiGe Impact Ionization MOSFET (VESIMOS)
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: FACULTY > Faculty of Engineering
Depositing User: Unnamed user with email storage.bpmlib@ums.edu.my
Date Deposited: 07 Mar 2016 05:33
Last Modified: 16 Oct 2017 07:14
URI: http://eprints.ums.edu.my/id/eprint/12786

Actions (login required)

View Item View Item