Performance analysis of single and dual channel vertical strained SiGe impact ionization MOSFET (VESIMOS)

Nurmin Bolong, and Ismail Saad, and Khairul Anuar Mohamad, and Bablu K. Ghosh, and H.M. Zuhir, and C Bun Seng, and Razali Ismail, and U. Hashim, (2013) Performance analysis of single and dual channel vertical strained SiGe impact ionization MOSFET (VESIMOS). In: Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium.

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Official URL: Http://dx.doi.org/10.1109/RSM.2013.6706540

Abstract

Single Channel (SC) and Dual Channel (DC) Vertical Strained-SiGe Impact Ionization MOSFET (VESIMOS) has been successfully simulated and analyzed in this paper. Found out that SC VESIMOS operate in conventional MOSFET mode at VDS = 1.75V, with 10% to 30% Ge mole fraction. However for Ge=50%, it's operated in Impact Ionization (II) mode with fast switching speed of subthreshold value, S=9.8 mV/dec. A better performance in threshold voltage, VTH, S value and ION/IOFF ratio were found in DC VESIMOS as compared to SC VESIMOS. The VTH=0.6V, S=10.98 mV/dec and ION/IOFF = 1×1013 were measured in DC VESIMOS with Ge=30% that clarify the advantage of DC utilization on VESIMOS device. These improvements were mainly due to the enhancement of electron mobility from 600 m2/V-s (first channel) to 1400 m2/V-s (second channel). The electron mobility was increased due to the splitting of conduction band valley into six fold where the electron mass are reduced in out of plane direction and thus enhanced the mobility of electron.

Item Type:Conference Paper (UNSPECIFIED)
Uncontrolled Keywords:Single Channel (SC) , Dual Channel (DC), Vertical Strained-SiGe Impact Ionization MOSFET (VESIMOS)
Subjects:T Technology > TA Engineering (General). Civil engineering (General)
Divisions:FACULTY > Faculty of Engineering
ID Code:12886
Deposited By:IR Admin
Deposited On:11 Feb 2016 09:23
Last Modified:11 Feb 2016 09:23

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