Field-Effect Transistor (FET) failure analysis

Marvin Tarang Anak Edward Suka, (2008) Field-Effect Transistor (FET) failure analysis. Universiti Malaysia Sabah. (Unpublished)


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This research is a failure analysis of the metal-oxide semiconductor field effect transistor (MOSFET) where the change of threshold voltage value, VTH, with the increase of temperature on the transistor is observed. In this research, the MPF 990 n-channel enhancement mode MOSFET is used. These transistors are first tested to confirm their good conditions before being heated in the oven. After the circuit built and the transistor heated in the oven, the measurement of the drain current, ID obtained will be recorded. This process is repeated for the other transistor. The drain current, ID that has been recorded is then used to calculate the value of the threshold voltage, VTH of the transistor with every increment of the temperature. Since the experiment does not obtain the drain current of the transistor, the measurement of voltage and resistance for each component in the circuit were taken and gathered in the tables. The circuit was successfully built but the drain current value was not being able to obtain

Item Type: Academic Exercise
Uncontrolled Keywords: MOSFET, voltage, transistor, temperature, heat
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: SCHOOL > School of Science and Technology
Depositing User: Unnamed user with email
Date Deposited: 19 Feb 2016 04:25
Last Modified: 27 Oct 2017 09:26

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