Ismail Saad, and Hazwani Syazana B Andee, and Seng C. Bun, and Zuhir H.Mohd, and Nurmin Bolong, (2016) Enhancing equivalent circuit model of Dual Channel Vertical Strained Impact Ionization MOSFET (DC-VESIMOS) for biosensor applications. In: 12th IEEE International Conference on Semiconductor Electronics, ICSE 2016, 17 August 2016 through 19 August 2016, Pullman HotelBangsar, Kuala Lumpur; Malaysia.
Official URL: Http://dx.doi.org/10.1109/SMELEC.2016.7573599
Dual Channel Vertical Strained Impact Ionization MOSFET (DC-VESIMOS) device shows superb performance with lower subthreshold slope (S) value of 11.48mV/dec and high range of ON and OFF current of 1013 obtained which indicates fast switching behavior and low leakage current respectively by using Silvaco's TCAD. Besides that, high breakdown voltage, VB of 2.45V is obtained which results in high reliability where the device become a promising candidates as a biosensor applications device. DC-VESIMOS demonstrated S value of 10.53mV/dec with supply voltage of VDS=1.75V in circuitry level. A considerable high breakdown voltage (VB=2.6V) and high ratio of ION/IOFF indicates low leakage currents and good reliability. The input of K parameter determines device behavior and the best value selected is when K=5 when compared with the published experimental works. Increase in body doping concentration will decrease the ON voltage of the device. In many aspects, DC-VESIMOS performance revealed that it was a best candidate to become one of the low power and high performance based biosensor applications device in the future.
|Item Type:||Conference Paper (UNSPECIFIED)|
|Uncontrolled Keywords:||Behavior Model; Biosensor; Body Doping; DC-VESIMOS; Equivalent Circuit Model|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Divisions:||FACULTY > Faculty of Engineering|
|Deposited By:||IR Admin|
|Deposited On:||16 Nov 2016 15:04|
|Last Modified:||16 Nov 2016 15:04|
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