Ballistic carrier transport in a quasi-two-dimensional nanoscale field effect transistor (FET)

Ismail Saad, and Mohammad Taghi Ahmadi, and Razali Ismail, and Vijay K. Arora, (2008) Ballistic carrier transport in a quasi-two-dimensional nanoscale field effect transistor (FET). In: 2008 IEEE International Conference on Semiconductor Electronics (ICSE 2008), 25-27 November 2008, Johor, Malaysia.

Full text not available from this repository.

Official URL: http://dx.doi.org/10.1109/SMELEC.2008.4770366

Abstract

The saturation velocity is found to be ballistic regardless of the device dimensions. This saturation velocity is limited by the intrinsic velocity appropriate to the 2D band structure of a M S ET. The ballistic intrinsic velocity arises from the fact that randomly oriented velocity vectors in zero electric field are streamlined and become unidirectional. In the degenerate realm, the saturation velocity is shown to be the ermi velocity that is independent of temperature but strongly dependent on carrier concentration. In the non-degenerate realm, the intrinsic velocity is the thermal velocity that depends only on the ambient temperature. The drain carrier velocity is revealed to be smaller than the saturation velocity due to the presence of a finite electric field at the drain. An excellent agreement of the models developed and applied to Onm M S ET validates the physics behind ballistic carrier transport. The results presented will have profound influence in interpreting the data for a variety of low-dimensional nanoscale E T. © 2008 IEEE.

Item Type:Conference Paper (UNSPECIFIED)
Uncontrolled Keywords:Ambient temperatures, Carrier velocity, Intrinsic velocity, Nano scale, Nanoscale field-effect transistors, Saturation velocity, Thermal velocity, Velocity vectors
Subjects:?? TK7800-8360 ??
Divisions:SCHOOL > School of Engineering and Information Technology
ID Code:1619
Deposited By:IR Admin
Deposited On:25 Mar 2011 10:29
Last Modified:30 Dec 2014 14:42

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