Ismail Saad, and Munawar A. Riyadi, and Zul Atfyi F.M.N., and Afifah Maheran A. Hamid, and Razali Ismail, (2010) Enhanced performance of vertical double gate MOSFET (VDGM) with oblique rotating implantation (ORI) method. In: 2010 IEEE International Conference on Semiconductor Electronics (ICSE 2010), 28-30 June 2010, Melaka, Malaysia.
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Official URL: http://dx.doi.org/10.1109/SMELEC.2010.5549532
An enhanced performance of vertical double gate MOSFET (VDGM) structure was revealed by adopting the oblique rotating ion implantation (ORI) method. The device structure was simulated based on TCAD tools and verified by good matching data with the published experimental results. With ORI method a symmetrical self-aligned source/drain regions over the silicon pillar and sharp vertical channel profile was observed. With Lg = 50nm, the VT is 0.96V in double gate and increased to 1.2V in single gate structure. The sub threshold swing, S = 81.9 mV/dec and S = 87.7 mV/dec were obtained for double and single gate devices respectively. Similarly, large IDsat = 370 A/ m was observed for double gate compared to single gate device. By scaling the Lg into 50nm, the VT remains almost the same when the Lg is larger than 80nm. However, it decreases rapidly when scaled down to 50nm. The leakage current increases rapidly when the Lg is scaled down to 100nm and beyond. However, the ratio of ION - I OFF is seen to be increases even with shorter Lg. These results indicates that ORI method is essential for overcoming various SCE as scaling the channel length down to nanometer regime. © 2010 IEEE.
|Item Type:||Conference Paper (UNSPECIFIED)|
|Uncontrolled Keywords:||Channel length, Current increase, Device structures, Double gate, Enhanced performance, Nano-meter regimes, Self-aligned, Silicon pillar, Single gates, Single-gate devices, Source/drain regions, Subthreshold swing, Vertical channels, Vertical double gate, Ion implantation, MOSFET devices|
|Subjects:||?? TK7800-8360 ??|
|Deposited By:||IR Admin|
|Deposited On:||28 Feb 2011 15:20|
|Last Modified:||30 Dec 2014 09:30|
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