Organic field-effect transistors with reversible threshold voltage shifts for memory element

Khairul Anuar Mohamad, and Afishah Alias, and Ismail Saad, and Katsuhiro Uesugi, and Hisashi Fukuda, (2012) Organic field-effect transistors with reversible threshold voltage shifts for memory element. International Journal of Simulation: Systems, Science and Technology, 113. pp. 42-47. ISSN 1473-8031

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Abstract

We introduce an charge-accepting layer on a poly(methyl methacrylate) (PMMA) dielectric to investigate the reversible threshold voltage (V) shifts in all-polymer n-channel organic field-effect transistor (OFET) using an organic semiconductor of an poly{[N,N’-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5’-(2,2’-bithiophene)} (P(NDI2OD-T2)). Top contact drain-source with a bottom-gate contact structure device exhibited a unipolar property with n-channel behavior. Furthermore, the existence of poly(3-hexylthiophene) (P3HT) films as a charge-accepting-like storage layers resulted in a reversible Vth shifts upon the application of external gate bias (V). Hence, all-polymer organic transistor with the charge-accepting layer exhibited a large memory window (?V th bias = 10.7 V) for write and erase electrically without major degradation in saturation mobility (µsat =1.8~2.8×10-4 cm2V-1s-1).

Item Type: Article
Uncontrolled Keywords: Organic semiconductor, n-channel, organic field-effect transistor (OFET), nonvolatile memory
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: FACULTY > Faculty of Computing and Informatics
Depositing User: Noraini
Date Deposited: 02 Apr 2018 06:17
Last Modified: 02 Apr 2018 06:17
URI: http://eprints.ums.edu.my/id/eprint/19675

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