Design and analysis of nanoscale vertical MOSFET using oblique rotating implantation (ORI) method with reduced parasitic capacitance

Ismail Saad, and Munawar Agus Riyadi, and Mohammad Taghi Ahmadi, and Razali Ismail, (2009) Design and analysis of nanoscale vertical MOSFET using oblique rotating implantation (ORI) method with reduced parasitic capacitance. In: International Conference on Nanoscience and Nanotechnology, Nano-SciTech 2008, 18-21 November 2008, Selangor, Malaysia.

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Abstract

The design and analysis of an enhanced performance of vertical MOSFET is revealed by adopting the oblique rotating ion implantation (ORI) method combined with fillet oxidation (FILOX) technology. These CMOS compatible processes have formed the symmetrical selfaligned source/drain regions over the silicon pillar with sharp vertical channel profiles. Accordingly, an increased numbers of electrons in the channel with decreased channel length (Lg) have shown to improved the threshold voltage, sub-threshold swing, drive-on current, leakage current, DIBL and drain saturation current significantly. The drain overlap capacitance is a factor of 0.2 lower and the source overlap capacitance is a factor of 1.5 lower than standard vertical MOSFETs. © 2009 American Institute of Physics.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: DIBL, Double gate, Ion implantation, Nanoscale FET, Vertical MOSFET
Subjects: ?? TK7800-8360 ??
Divisions: SCHOOL > School of Engineering and Information Technology
Depositing User: Unnamed user with email storage.bpmlib@ums.edu.my
Date Deposited: 22 Mar 2011 09:16
Last Modified: 30 Dec 2014 06:26
URI: http://eprints.ums.edu.my/id/eprint/2529

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