Ballistic saturation velocity of quasi-2D Low- dimensional nanoscale field effect transistor (FET)

Ismail Saad, and Mohammad Taghi Ahmadi, and Munawar Agus Riyadi, and Razali Ismail, and V. K. Arora, (2009) Ballistic saturation velocity of quasi-2D Low- dimensional nanoscale field effect transistor (FET). In: International Conference on Nanoscience and Nanotechnology, Nano-SciTech 2008, 18-21 November 2008, Selangor.

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Official URL: http://dx.doi.org/10.1063/1.3160152

Abstract

The saturation velocity is found to be ballistic regardless of the device dimensions. The ballistic intrinsic velocity is based on streamlining of the randoMYS oriented velocity vectors in zero electric field. In the degenerate realm, the saturation velocity is shown to be the Fermi velocity that is independent of temperature but strongly dependent on carrier concentration. In the non-degenerate realm, it's becomes thermal velocity that depends only on the ambient temperature. The drain carrier velocity is revealed to be smaller than the saturation velocity due to finite electric field at the drain-end. An excellent agreement is revealed when comparing the model to 80nm fabricated MOSFET. © 2009 American Institute of Physics.

Item Type:Conference Paper (UNSPECIFIED)
Uncontrolled Keywords:Ballistic transport, Fermi velocity, Low-dimensional device, Nanoscale FET
Subjects:?? TK7800-8360 ??
Divisions:SCHOOL > School of Engineering and Information Technology
ID Code:2530
Deposited By:IR Admin
Deposited On:22 Mar 2011 17:20
Last Modified:30 Dec 2014 14:18

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