Gamma Ray and Neutron Radiation effects on the electrical and structural properties of n-ZnO/p-CuGaO2 Schottky Diode

Gamma Ray and Neutron Radiation effects on the electrical and st, and Fuei Pien Chee, and Rosfayanti Rasmidi, and Afishah Alias, and Saafie Salleh, and Khairul Anuar Mohd Salleh, and Abi Muttaqin Jalal Bayar, (2020) Gamma Ray and Neutron Radiation effects on the electrical and structural properties of n-ZnO/p-CuGaO2 Schottky Diode. ECS Journal of Solid State Science and Technology, 9 (4).

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Abstract

This research focuses on the radiation tolerance of ZnO and CuGaO2 based semiconductor application for space borne application. In this research, n-ZnO/p-CuGaO2 based semiconductor devices were fabricated and exposed to gamma rays with increasing total ionizing dose (TID) and neutron fluence at different flux. Based on the I-V properties, the decrease in the turn-on voltage of the diode is noticeable with increasing radiation dose for both gamma and neutron flux exposure. The maximum turn-on-voltage of the fabricated diode was shown to be 1.5 V. Exposure towards gamma, shows that the turn-on is increased to 4.7 V at 200 kGy. However, the effect of neutron flux at 6.5 × 1015 n cm−2 shows a small significant effect on the turn on voltage of 1.7 V after irradiation. Results show moderate mitigation towards irradiation, indicating that n-ZnO/p-CuGaO2 thin film is capable of withstanding harsh radiation environment while still retaining its semiconductor as the changes in band gap ranges between 3 eV to 4 eV at post-irradiation.

Item Type: Article
Uncontrolled Keywords: Radiation tolerance , ZnO , CuGaO2 , TID
Subjects: Q Science > QC Physics
Divisions: FACULTY > Faculty of Science and Natural Resources
Depositing User: Noraini
Date Deposited: 07 Jul 2020 02:16
Last Modified: 07 Jul 2020 02:16
URI: http://eprints.ums.edu.my/id/eprint/25584

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