Electrical and Photo-Electrical Characteristics of a GaInNAs basedp-i-n Diode with 10- undoped Quantum Wells

Khairul Anuar Mohamad and Mohamad Syahmi Nordin and Mohamad Izzuddin Abd Samad and Afishah Alias and Abu Bakar Abd Rahman and Adrian Boland-Thomas and Anthony John Vickers (2020) Electrical and Photo-Electrical Characteristics of a GaInNAs basedp-i-n Diode with 10- undoped Quantum Wells. ASM Science Journal, 13. pp. 1-6.

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Abstract

An electrical and photo-electrical characteristics of a dilute nitride GaInNAs p-i-n diode with 10-undoped quantum wells (10-QWs) were investigated at room temperature. The QWs consists of 10-nm thick and separated by 10 nm GaAs barriers. The dilute nitride-based p-i-n diode exhibits a good rectifying behavior and discloses that the fabricated devices has a Schottky property. The current-voltage (I-V) characteristics showed the forward-biased region of I-V curves exhibited an exponential dependence of current on applied bias, whereas the reversed-biased region shows the saturation current with negative reverse current value (leakage currents) under dark condition. As the device was exposed to photo-illumination, the electrical characteristic exhibited an increase of dark-current by four orders of magnitude to that of device under dark condition. Upon photo-illumination, there was also a shift in the threshold voltage from 0.58 V to 0.73 V. Ideality factor, n and barrier height, B are main electrical parameters were extracted using conventional forward bias I-V characteristics. The values of barrier height, which were obtained were in good agreement with other reported values. The value of n was found to be 1.95 and 28.56. Ideality factor approaches 2 indicated that fully trap-assisted recombination in quantum wells. While, high ideality factor at photo-illumination indicated that the charge transport mechanism is controlled by tunnelling emission.

Item Type: Article
Uncontrolled Keywords: dilute nitride, GaAsNAs, p-i-n diode, current-voltage, ideality factor, barrier height
Subjects: Q Science > Q Science (General)
Divisions: FACULTY > Faculty of Science and Natural Resources
Depositing User: SITI AZIZAH BINTI IDRIS -
Date Deposited: 03 Dec 2020 05:29
Last Modified: 06 Jan 2021 05:17
URI: http://eprints.ums.edu.my/id/eprint/26392

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