X-Ray Spectral Investigation of Silicon-Ligand Bond in Si(OC₂H₅)₄, Si(C₆H₅)₄ and (OH) ₂Si(C₆H₅)₂ Compounds

Maryati Mohamed, Datin and S., David Urch (1997) X-Ray Spectral Investigation of Silicon-Ligand Bond in Si(OC₂H₅)₄, Si(C₆H₅)₄ and (OH) ₂Si(C₆H₅)₂ Compounds. Journal of the Indian Chemical Society, 74 (3). pp. 174-175. ISSN 00194522

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Abstract

X-Ray photoelectron and X-ray emission spectra (SiKα�₂, and SiKβ�,₃) of the titled silicon compounds are studied. These spectra reveal only σ-bonding in case of Si(OC₂H₅)₄ between silicon and ligand, but in case of Si(OC₂H₅)₄ and (OH) ₂Si(C₆H₅)₂, both σ- and π-bonding have been exhibited. The observation is discussed in terms of simple molecular orbital theory. The SiK β emission spectrum of (OH) ₂Si(C₆H₅)₂ shows that the compound suffers a decomposition due to heat produced during X-ray bombardment.

Item Type: Article
Uncontrolled Keywords: Spectral Investigation, Silicon-Ligand Bond
Subjects: ?? QC770-798 ??
?? QD146-197 ??
Divisions: SCHOOL > Institute for Tropical Biology and Conservation
Depositing User: Unnamed user with email storage.bpmlib@ums.edu.my
Date Deposited: 31 Jan 2012 03:21
Last Modified: 16 Oct 2017 06:29
URI: http://eprints.ums.edu.my/id/eprint/3404

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