N-Channel organic thin-film transistors based on naphthalene- bis(dicarboximide) polymer for organic transistor memory using hole-acceptor layer

Khairul Anuar Mohamad, and Yousuke, Kakuta and Uesugi, Katsuhiro and Fukuda, Hisashi (2011) N-Channel organic thin-film transistors based on naphthalene- bis(dicarboximide) polymer for organic transistor memory using hole-acceptor layer. Japanese Journal of Applied Physics , 50 (9). ISSN 0021-4922

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Official URL: http://dx.doi.org/10.1143/JJAP.50.091603

Abstract

An investigation of threshold voltage shifts in organic thin-film transistors (OTFTs) based on poly{[N,N″-bis(2-octyldodecyl)-naphthalene-1, 4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5″-(2,20-bithiophene)} [P(NDI2OD-T2)] with additional poly(3-hexylthiophene) (P3HT) films on a poly(methyl methacrylate) (PMMA) organic dielectric layer is reported. With a top source-drain contact structure, the device exhibited a unipolar property with n-channel characteristics similar to those of the P(NDI2OD-T2)-only device. Furthermore, the existence of P3HT films as hole acceptor-like storage layers resulted in reversible V th shift upon the application of external gate bias (V bias) for a certain bias time (T bias). Hence, the P(NDI2ODT2)/ P3HT-OTFTs exhibited a large memory window (δV th = 10.7 V) for write and erase electrically without major degradation in saturation mobility [μ sat = (1.8-2.8) × 10 ¯⁴ cm 2 V ¯¹ s ¯¹]. These results clearly indicate the utility of the naphthalene-bis(dicarboximide) (NDI)-based polymer-hole acceptor layer in the development of n-channel organic transistor memories.

Item Type:Article
Uncontrolled Keywords:Acceptor layers, Gate bias, Memory window, N-channel, Organic dielectric layers, Organic thin film transistors, Organic transistor, Poly-3-hexylthiophene, Saturation mobility, Source-drain contacts, Storage layers, Threshold voltage shifts, Esters, Thin film transistors, Threshold voltage, Transistors, Naphthalene
Subjects:?? QC501-766 ??
Divisions:SCHOOL > School of Engineering and Information Technology
ID Code:4990
Deposited By:IR Admin
Deposited On:01 Oct 2012 17:10
Last Modified:16 Feb 2015 11:50

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