Pogaku, Ravindra and Ismail Saad, (2011) Effects of S/D doping concentrations on strained SiGe vertical I-MOS characteristics. In: 3rd International Conference on Electronics Computer Technology, ICECT 2011, 8-10 April 2011, Kanyakumari, India.
Full text not available from this repository.
Official URL: http://dx.doi.org/10.1109/ICECTECH.2011.5941704
This paper reports the effects of source and drain doping concentration on the device characteristics of strained SiGe vertical Impact Ionization MOSFET (I-MOS). Silvaco 2-D Atlas simulations were done to examine the device characteristics. It was found that the source-drain doping concentrations had a significant impact on the threshold voltage of the device. With increasing doping concentrations, the threshold voltage values decreased. This can be explained by the higher electric field and the impact generation rates, with increasing doping concentrations. A threshold voltage of 0.9V was obtained for a drain bias of 1.75V, with S/D doping concentration of 10. The effects of S/D doping on subthreshold slopes was also examined with the help of TCAD device simulations.
|Item Type:||Conference Paper (UNSPECIFIED)|
|Uncontrolled Keywords:||Impact ionization, SiGe, Strain, Subthreshold slope, threshold voltage, Vertical I-MOS, ATLAS simulations, Device characteristics, Device simulations, Doping concentration, Drain bias, Generation rate, MOS-FET, SiGe, Significant impacts, Silvaco, Source and drains, Source-drain, Strained SiGe, Subthreshold slope, vertical I-MOS, Electric fields, MOSFET devices, Semiconducting silicon compounds, Silicon alloys, Threshold voltage, Impact ionization|
|Subjects:||?? TK7800-8360 ??|
|Divisions:||SCHOOL > School of Engineering and Information Technology|
|Deposited By:||IR Admin|
|Deposited On:||01 Oct 2012 17:46|
|Last Modified:||08 Sep 2014 16:07|
Repository Staff Only: item control page