Computational analysis of ballistic saturation velocity in low-dimensional nano-MOSFET

Ismail Saad, and A. M. Khairul, and Nurmin Bolong, and A. R. Abu Bakar, and Vijay K. Arora, (2011) Computational analysis of ballistic saturation velocity in low-dimensional nano-MOSFET. International Journal of Simulation: Systems, Science and Technology, 12 (3). pp. 1-6. ISSN 1473-8031

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Official URL: http://ijssst.info/Vol-12/No-3/paper1.pdf

Abstract

The computational analysis of ballistic saturation velocity for low-dimensional nano-devices was presented. The ballistic transport is predicted in the presence of high electric field for non-degenerate and degenerate regime. The saturation velocity is found to be ballistic regardless of the device dimensions. The intrinsic velocity limits this saturation velocity. It's does not sensitively depend on the ballistic or scattering-limited nature of the mobility. In the degenerate realm, the saturation velocity is shown to be the Fermi velocity that is independent of temperature but strongly dependent on carrier concentration. In the nondegenerate realm, the intrinsic velocity is the thermal velocity that depends only on the ambient temperature.

Item Type:Article
Uncontrolled Keywords:Ballistic transport, Low-dimensional devices, Nano-devices, Saturation velocity, Computational analysis, Fermi velocities, High electric fields, Intrinsic velocity, Low-dimensional devices, Nano-devices, Saturation velocity, Thermal velocity, Ballistics, Computational methods, Electric fields, MOSFET devices, Transport properties, Velocity
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:SCHOOL > School of Engineering and Information Technology
ID Code:5077
Deposited By:IR Admin
Deposited On:10 Oct 2012 11:30
Last Modified:16 Feb 2015 12:24

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