Design and simulation analysis of vertical double-gate MOSFET (VDGM) structure for nano-device application

Ismail Saad, and Nurmin Bolong, and P.Divya, and Bablu K. Ghosh, and Teo, Kenneth Tze Kin (2011) Design and simulation analysis of vertical double-gate MOSFET (VDGM) structure for nano-device application. International Journal of Simulation: Systems, Science and Technology, 12 (3). pp. 7-11. ISSN 1473-8031

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Official URL: http://doi.ieeecomputersociety.org/10.1109/UKSIM.2...

Abstract

Design and simulation analysis of vertical MOSFET structure with double gate structure on each side of insulating pillar for nanodevice applications is presented. The body doping effect on vertical channel for channel length, L g = 50nm and analyzing its effect towards such small devices was successfully performed. The analysis continued with the comparative investigation of device performance with conventional planar MOSFET as scaling L g down to 50nm. The final part evaluates the innovative design of incorporating dielectric pocket (DP) on top of vertical MOSFET turret with comprehensive device performance analysis as compared to standard vertical MOSFET in nanoscale realm. An optimized body doping for enhanced performance of vertical MOSFET was revealed. The vicinity of DP near the drain end is found to reduce the charge sharing effects between source and drain that gives better gate control of the depletion region for short channel effect (SCE) suppression in nanodevice structure.

Item Type:Article
Uncontrolled Keywords:Dielectric pockets, Doping effect, Planar MOSFET, Short channel effect, Vertical MOSFET, Body doping, Channel length, Charge sharing effects, Depletion region, Design and simulation, Device performance, Doping effect, Double gate MOSFET, Double-gate structures, Enhanced performance, Gate control, Innovative design, MOS-FET, Nano device, Nano scale, Nanodevice applications, Short-channel effect, Small devices, Source and drains, Vertical channels, Vertical MOSFETs, Design, Nanostructured materials, Threshold voltage, MOSFET devices
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:SCHOOL > School of Engineering and Information Technology
ID Code:5078
Deposited By:IR Admin
Deposited On:10 Oct 2012 11:40
Last Modified:16 Feb 2015 12:25

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