All-polymer organic field-effect transistors with memory element

Khairul Anuar Mohamad, and Afishah Alias, and Ismail Saad, and Uesugi, Katsuhiro and Fukuda, Hisashi (2012) All-polymer organic field-effect transistors with memory element. In: 3rd International Conference on Intelligent Systems, Modelling and Simulation (ISMS 2012) , 8-10 February 2012, Kota Kinabalu, Sabah, Malaysia.

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We introduce an hole-accepting layer on a poly(methyl methacrylate) (PMMA) dielectric to investigate the reversible threshold voltage (Vth) shifts in all-polymer nchannel organic field-effect transistor (OFET) using an organic semiconductor of an poly{[N,N'-bis(2-octyldodecyl)- naphthalene-1,4,5,8- bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'- bithiophene)} (P(NDI2OD-T2)). Top drain-source with a bottom-gate contact structure device exhibited a unipolar property with n-channel behavior. Furthermore, the existence of poly(3-hexylthiophene) (P3HT) films as a hole-accepting-like storage layers resulted in a reversible V th shifts upon the application of external gate bias (V bias). Hence, all-polymer organic transistor with the hole-accepting layer exhibited a large memory window (ΔV th = 10.7 V) for write and erase electrically without major degradation in saturation mobility (μ sat = 1.8∼2.8×10 ¯⁴ cm ² V ¯¹, s ¯¹).

Item Type:Conference Paper (UNSPECIFIED)
Uncontrolled Keywords:N-channel, Nonvolatile memory, Organic fieldeffect transistor, Organic semiconductor, Bithiophenes, Contact structure, Gate bias, Memory element, Memory window, N-channel, Non-volatile memories, Organic transistor, Poly-3-hexylthiophene, Saturation mobility, Storage layers, Esters, Intelligent systems, Naphthalene, Organic field effect transistors, Polymers, Semiconducting organic compounds, Semiconductor devices, Hole mobility
Subjects:?? TK7800-8360 ??
Divisions:SCHOOL > School of Engineering and Information Technology
ID Code:5581
Deposited By:IR Admin
Deposited On:10 Dec 2012 15:50
Last Modified:18 May 2015 11:36

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