Temperature dependence of CuGaO 2 films fabricated by sol-gel method

Afishah Alias, and Sakamoto, Masato and Kimura, Teppei and Uesugi, Katsuhiro (2012) Temperature dependence of CuGaO 2 films fabricated by sol-gel method. Japanese Journal of Applied Physics , 51 (3). ISSN 0021-4922


Official URL: http://dx.doi.org/10.1143/JJAP.51.035503


P-type CuGaO₂ films have been fabricated on silicon substrates by the sol-gel method. The stable sol solutions for CuGaO₂ growth were developed by the mixing of Cu-O and Ga-O sol solutions using copper(II) acetate monohydrate and tris(acetylacetonato) gallium(III), respectively. Phase separation in CuGaO₂ films depends on the sol solution temperature and postbake temperature and duration. CuGaO₂ films without a CuO phase were fabricated by postbaking at temperatures of approximately 800 °C for 1 h in N₂ atmosphere. The sol-gel-derived CuGaO₂ films show high transparency of more than 80% in the visible range, and the energy gap is approximately 3.6 eV.

Item Type:Article
Uncontrolled Keywords:High transparency, P-type, Postbaking, Silicon substrates, Sol solutions, Temperature dependence, Visible range, Atmospheric temperature, Fabrication, Phase separation, Sol-gel process, Sol-gels, Copper
Divisions:SCHOOL > School of Science and Technology
ID Code:5714
Deposited By:IR Admin
Deposited On:07 May 2013 10:28
Last Modified:23 Feb 2015 11:40

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