Compatibility Issues of Si Technology with Higher Band Gap Materials for RF Applications

Bablu K. Ghosh, and Ismail Saad, and Khairul Anuar Mohamad, and Nurmin Bolong, and Nurfarariyanti Parimon, and Afishah Alias, and Mohd Zuhir Hamzah, (2012) Compatibility Issues of Si Technology with Higher Band Gap Materials for RF Applications. In: 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE), 19-21 September 2012, Kuala Lumpur, Malaysia.

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Official URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arn...

Abstract

Now-a-days microwave (MW) electronics is an extremely rapid developing field in semiconductor electronics. For the present and near future demand, research is progressing for the development of high speed and high power density RF devices fabrication beside main stream Si based research. For mixed and RF signal performance, Si still has limitations for it further scaling due to excess leakage of current and low trans- conductance or fT and f Max. So, suitable alternative materials device fabrication is potential. In this paper doping profile of GaAs channel and compositional (% of Al) variation in AlGaAs layer for schottky contact for AlGaAs/GaAs compound semiconductor (CS) based HEMT (high electron mobility transistor) is evaluated. Besides that, gate oxide thickness effects on covalent bonded Si based nMOS gate turn on time and ON/OFF current have also been evaluated. It appears that increasing Al composition in AlGaAs and more doping in GaAs layer enhances channel trans-conductance while low % of Al in AlGaAs layer and low doping in GaAs layer increases ON/OFF current ratio (reduces leakage current). In case of Si MOS, decreasing oxide layer thickness, transconductance is increased but ON/OFF current ratio is decreased (increase leakage current)

Item Type:Conference Paper (UNSPECIFIED)
Uncontrolled Keywords:oxide layer thickness,, trans-conductance, HEMT technology, Si gate, Si MOS, dielectric material, variation, AlGaAs/GaAs, RF Application
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:SCHOOL > School of Engineering and Information Technology
SCHOOL > School of Science and Technology
ID Code:6612
Deposited By:IR Admin
Deposited On:22 Jul 2013 14:41
Last Modified:18 May 2015 11:39

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