Field-effect transistor (FET) failure analysis

Kenneth Abell Anak John, (2007) Field-effect transistor (FET) failure analysis. Universiti Malaysia Sabah. (Unpublished)


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This research is a failure analysis of the metal-oxide-semiconductor field effect transistor (MOSFET) where the change of the threshold voltage value, VTH, with the increase of radiation dosage on the transistor is observed. In this research, the MPF990 n-channel enhancement mode MOSFET is used. These transistors are first tested to confirm their good conditions before being irradiated with beta radiation. After the irradiation, these transistors are reconnected to the circuit and a multimeter is also connected to obtain a measurement of the drain current, Io which is recorded 10 times. This process is repeated for the other transistors. The average value of the drain current, Io, that has been recorded is then used to calculate the value of the threshold voltage, VTH of the transistor according to the dosage of radiation received. The VTH value obtained is then used to plot a graph of threshold voltage versus radiation dosage. From the analysis done on the data and the graph, it is found that the transistor is already slightly damaged at 0.5 KGray and the threshold voltage value increases as the radiation dosage increases. From this, it is deduced that the increase of radiation dosage can cause failure in the enhancement mode n-channel MOSFET (MPF990). This is because, according to theory, that when the threshold voltage, V TH increases and becomes larger than the gate-source voltage, VGS, then the drain current, Io, will gradually decrease to zero.

Item Type: Academic Exercise
Uncontrolled Keywords: metal-oxide-semiconductor, transistor, voltage value, gate-source voltage, drain
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: SCHOOL > School of Science and Technology
Date Deposited: 21 Nov 2013 04:17
Last Modified: 17 Oct 2017 05:27

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