The simulation of electrical I-V characteristics of metal oxide semiconductor field effect transisor (MOSFET) by using pisces IIB 9009

Thong, De Sheng (2008) The simulation of electrical I-V characteristics of metal oxide semiconductor field effect transisor (MOSFET) by using pisces IIB 9009. Universiti Malaysia Sabah. (Unpublished)

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Abstract

In this study, PISCES IIB 9009 device simulator is used to obtain drain current of MOSFET. There are four factors to discuss and comparison the IV characteristics of MOSFET. The four factors are gate thickness, doping concentration, width in y axis, and different material with gallium arsenide. These four factors are changes its value and the simulation results are plot. The POSTMINI software is used to verify the structure MOSFET before run the solve parts in simulator. To solve the threshold voltage of MOSFET, the gate voltage is increased from 0V to 3.0V and the drain current is set to 0.1V, the data drain current is collected from the PISCES simulator output. To solve the drain characteristics of MOSFET, the drain voltage is increased from 0V to 3.0V and the gate voltage is set to constant value, the data drain current is then collected from the PISCES simulator. The graph I d against Vg and graph I d against V d were plotted to obtain the IV characteristics of MOSFET. The factors that influence the threshold voltage and saturation current were being studied. The structure of MOSFET in this study is n-channel enhancement MOSFET with the length is 3.0 μm and width is 2.0 μm. Due to the small size device, the drain current is small, which is around 40 μA. The threshold voltage is around 0.5V to 2.0V and it is suitable to use as switch in the electronics. The results show gallium arsenide having the higher saturation current than silicon.

Item Type: Academic Exercise
Uncontrolled Keywords: gate thickness, doping concentration, gallium arsenide, silicon, MOSFET, POSTMINI software, PISCES simulator
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: SCHOOL > School of Science and Technology
Depositing User: MDM SITI AZIZAH IDRIS
Date Deposited: 10 Mar 2014 05:41
Last Modified: 12 Oct 2017 05:38
URI: http://eprints.ums.edu.my/id/eprint/8409

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