Body doping influence in vertical MOSFET design

Munawar Agus Riyadi and Z. A. F. M. Napiah and Jatmiko Endro Suseno and Ismail Saad and Razali Ismail (2009) Body doping influence in vertical MOSFET design. In: 2009 Innovative Technologies in Intelligent Systems and Industrial Applications, (CITISIA) , 25-26 July 2009, Kuala Lumpur, Malaysia.

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The vertical MOSFET is considered as an alternative to nanoscale device structure, due to relaxeddependence on lithography and easier double gate realization. In this paper, the influence of body doping concentration variation in vertical MOSFET developed using oblique-rotating implantation (ORI) method is investigated. For this purpose, two-dimensional process simulation was made using TCAD tools for several Nsub, namely 1, 4, 7 ad 10.10 18 cm-3, respectively. The electrical characteristic and short channel effect i.e. DIBL and subthreshold swing, for different body doping were deliberated. The result also suggests the required change in the pillar design in maintaining the gate channel. © 2009 IEEE.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: Body doping, Double gate, Electrical characteristic, Gate channel, Nanoscale device, Pillar design, Process simulations ; Short-channel effect, Subthreshold swing, Vertical MOSFETs Engineering controlled terms : Industrial applications, Intelligent systems, Logic design, MOSFET devices Engineering main heading: Lithium batteries
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK1-9971 Electrical engineering. Electronics. Nuclear engineering > TK7800-8360 Electronics
Divisions: SCHOOL > School of Engineering and Information Technology
Depositing User: ADMIN ADMIN
Date Deposited: 24 Mar 2011 17:37
Last Modified: 30 Dec 2014 14:18

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