Optical responses and optically program-electrically erase memory in organic transistors

Khairul Anuar Mohamad and Ismail Saad and Uesugi, Katsuhiro and Fukuda, Hisashi (2011) Optical responses and optically program-electrically erase memory in organic transistors. In: 2011 IEEE 2nd International Conference on Photonics, ICP 2011, 17-19 October 2011, Kota Kinabalu, Sabah.

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The energy levels of organic semiconductor materials; poly(3- hexylthiophene) (P3HT) and [6,6]-phenyl C 61-butyric acid methyl ester (PCBM), were investigated using photo-electron spectroscopy in air (PESA) and UV-Vis spectrophotometer. Solution-processed organic thin-film transistors (OTFTs) based on P3HT/PCBM blend thin film in a top source-drain contact structure was fabricated, and the optical response and memory effects of the devices were also investigated. A unipolar property with p-channel characteristics were obtained in dark condition, and upon an optical response, the drain current was increased. Moreover, the drain current was decreased gradually with delay time after turning off the light, while negative gate bias was required to revert back to initial dark condition. The memory effects of the P3HT/PCBM-OTFTs were attributed to the photocurrent induction and electron trapping-detrapping capability of PCBM nanoparticles. The optical-electro memory effect based on the OTFTs can be programmed optically and erased electrically.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: Blend thin films, Dark conditions, Delay Time, Memory effects, Methyl esters, Negative gate, Optical response, Organic thin film transistors, Organic transistor, Solution-processed, Source-drain contacts, UV-Vis spectrophotometers
Subjects: T Technology > TA Engineering (General). Civil engineering (General) > TA1-2040 Engineering (General). Civil engineering (General) > TA1501-1820 Applied optics. Photonics
Depositing User: ADMIN ADMIN
Date Deposited: 14 May 2012 15:46
Last Modified: 30 Dec 2014 09:42
URI: http://eprints.ums.edu.my/id/eprint/4138

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