Items where Author is "Akihiro Hashimoto, "

Article

Bablu K. Ghosh, and ToruTanikawa, and Akihiro Hashimoto, and Akio Yamamoto, and Yoshifumi Ito, (2003) Reduced-stress GaN epitaxial layers grown on Si(1 1 1) by using a porous GaN interlayer converted from GaAs. Journal of Crystal growth, 249 (3-4). pp. 422-428.