Items where Author is "H.M. Zuhir, "

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Number of items: 8.

Article

Nurmin Bolong, and H.M. Zuhir, and Chan, Bun Seng and Ismail Saad, and Khairul Anuar Mohamad, and Bablu K. Ghosh, Effect of the Ge Mole Fraction on the Electrical Characteristics of Single and Dual Channel Vertical Strained SiGe Impact Ionization MOSFET (VESIMOS). Advanced Materials Research, 1107. pp. 496-501.

Nurmin Bolong, and H.M. Zuhir, and Ismail Saad, and C. Bun Seng, and Pogaku, Ravindra (2014) In-depth design and simulation analysis of vertical strained impact ionization MOSFET (VESIMOS). International Journal of Simulation: Systems, Science & Technology, 15 (2). pp. 32-39.

Nurmin Bolong, and Bablu K. Ghosh, and U. Hashim, and C. Bun Seng, and Ismail Saad, and H.M. Zuhir, and Khairul Anuar Mohamad, and Razhwan Ismail, (2014) Breakdown voltage reduction analysis with adopting dual channel vertical strained sige impact ionization mosfet (VESIMOS). International Journal of Simulation: Systems, Science & Technology, 15 (2). pp. 40-45.

Conference or Workshop Item

Nurmin Bolong, and Divya Pogaku, and Khairul Anuar Mohamad, and U. Hashim, and H.M. Zuhir, and Ismail Saad, and Chan, Bun Seng and A R Abu Bakar, (2013) Body doping analysis of vertical strained-SiGe Impact Ionization MOSFET incorporating dielectric pocket (VESIMOS-DP). In: Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium.

Nurmin Bolong, and Ismail Saad, and Khairul Anuar Mohamad, and Bablu K. Ghosh, and H.M. Zuhir, and C Bun Seng, and Razali Ismail, and U. Hashim, (2013) Performance analysis of single and dual channel vertical strained SiGe impact ionization MOSFET (VESIMOS). In: Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium.

Ismail Saad, and H.M. Zuhir, and Nurmin Bolong, and Khairul Anuar Mohamad, and Bablu K. Ghosh, and Razali Ismail, (2013) Mobility enhancement on Vertical Strained-SiGe Impact Ionization MOSFET incorporating Dielectric Pocket (VESIMOS-DP). In: TENCON 2013 - 2013 IEEE Region 10 Conference (31194).

Ismail Saad, and Nurmin Bolong, and H.M. Zuhir , and Khairul Anuar Mohamad, and D. Pogaku , and A.R.A. Bakar, (2012) Enhanced performance analysis of vertical strained-sigeimpact Ionization MOSFET (VESIMOS). In: Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference .

Ismail Saad, and Nurmin Bolong, and Khairul Anuar Mohamad, and H.M. Zuhir, and D. Pogaku, and A.R.A. Bakar, (2012) Investigation of incorporating dielectric pocket (DP) on Vertical Strained-SiGe Impact Ionization MOSFET (VESIMOS-DP). In: Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference.

This list was generated on Tue Mar 19 23:39:00 2019 MYT.