Electrical characterization and source-drain voltage dependent mobility of P-channel organic field-effect transistors using MATLAB simulation

Umar Farok and Yona Falinie and Afishah Alias and Bablu Kumar Ghosh and Ismail Saad and Ahmad Mukifza Harun and Khairul Anuar Mohamad (2014) Electrical characterization and source-drain voltage dependent mobility of P-channel organic field-effect transistors using MATLAB simulation. In: 2013 1st International Conference on Artificial Intelligence, Modelling and Simulation, 3-5 December 2013, Kota Kinabalu, Malaysia.

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Official URL: https://ieeexplore.ieee.org/abstract/document/6959...

Abstract

We demonstrate fabrication of bottom gate/top source-drain contacts for p-channel (small molecule) organic field-effect transistor (OFET) using pentacene as an active semiconductor layer and silicon dioxide (SiO2) as gate dielectric. The device exhibits a typical output curve of a field-effect transistor (FET). Furthermore, analysis of electrical characterization was done to investigate the source-drain voltage (Vds) dependent mobility. The mobility which calculated using MATLAB simulation exhibited a range from 0.0234 to 0.0258 cm2/Vs with increasing source-drain voltage (average mobility was 0.0254 cm2/Vs). This work suggests that the mobility increase with increasing source-drain voltage similar to the gate voltage dependent mobility phenomenon.

Item Type:	Conference or Workshop Item (Paper)
Keyword:	P-channel , Organic field-effect transistor , Pentacene , Mobility
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK1-9971 Electrical engineering. Electronics. Nuclear engineering > TK7800-8360 Electronics > TK7885-7895 Computer engineering. Computer hardware
Department:	FACULTY > Faculty of Engineering
Depositing User:	SAFRUDIN BIN DARUN -
Date Deposited:	06 Sep 2021 13:17
Last Modified:	06 Sep 2021 13:17
URI:	https://eprints.ums.edu.my/id/eprint/30306

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