Fabrication Process of n-AlGaAs/GaAs Schottky Diodes for on-chip Direct Integrated with Dipole Antenna

Norfarariyanti Parimon and Rosalyn R Porle and Mazlina Mamat (2015) Fabrication Process of n-AlGaAs/GaAs Schottky Diodes for on-chip Direct Integrated with Dipole Antenna. Universal Journal of Electrical and Electronic Engineering, 3. pp. 81-84. ISSN 2332-3280 (P-ISSN) , 2332-3299 (E-ISSN)

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URL: https://www.hrpub.org/download/20150620/UJEEE2-149...

Abstract

Schottky diodes are fabricated on n-Aluminium Gallium Arsenide / Gallium Arsenide (n-AlGaAs/GaAs) high-electron-mobility-transistor (HEMT) structure due to availability of high electron mobility and capability of fast switching performance. The processing steps used in the fabrication are the conventional steps used in standard GaAs processing. The ohmic and Schottky contacts of Schottky diodes are facilitated with ground-signal-ground (G-S-G) coplanar waveguide (CPW) transmission line structure so that it may provide the possibility of direct on-chip integration without insertion of a matching circuit with dipole antenna.

Item Type:	Article
Keyword:	n-AlGaAs/GaAs , Schottky diode , Dipole antenna
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK1-9971 Electrical engineering. Electronics. Nuclear engineering > TK7800-8360 Electronics
Department:	FACULTY > Faculty of Engineering
Depositing User:	SAFRUDIN BIN DARUN -
Date Deposited:	24 Mar 2022 14:34
Last Modified:	24 Mar 2022 14:34
URI:	https://eprints.ums.edu.my/id/eprint/32021

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