Effects of S/D doping concentrations on Vertical Strained-SiGe Impact Ionization MOSFET incorporating Dielectric Pocket (VESIMOS-DP)

Nurmin Bolong, and Ismail Saad, and Bablu K. Ghosh, and Z. Hamzah, and B. Seng, and K. Anuar, (2013) Effects of S/D doping concentrations on Vertical Strained-SiGe Impact Ionization MOSFET incorporating Dielectric Pocket (VESIMOS-DP). In: 1st International Conference on Artificial Intelligence, Modelling and Simulation, AIMS 2013 11/2014.

[img]
Preview
PDF
47Kb

Official URL: Http://dx.doi.org/10.1109/AIMS.2013.87

Abstract

The Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET with Dielectric Pocket (VESIMOS-DP) has been successfully developed and analyzed in this paper. The effect of Source and Drain (S/D) doping concentration to the VESIMOS-DP on the performance of the device in terms of sub threshold swing, threshold voltage and drain current has been observed in this paper. There are significant drop (from S=30mv/dec to S=19mv/dec) in sub threshold slope while threshold voltage is increase as the S/D concentration increases is observed in this paper. It is notable that for S/D doping concentration above 1019 atoms/cm3, there are significant increase in S values which is not recommended as the switching speed getting higher distracting performance of the device. However, too low doping concentration is not essential as it didn't show any significance improvement on the performance of the device. Thus, optimum S/D doping concentration is imperative to obtain superb device characteristic Due to the DP layer, a stable VTH =1.35V obtained due to the vicinity of DP layer near the drain end has reduce charge sharing between the source and drain. The slight different and consistency of VESIMOS-DP sub threshold value (S = 19 mV/dec) has given advantages for incorporating DP layer near the drain end.

Item Type:Conference Paper (UNSPECIFIED)
Uncontrolled Keywords:The Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET , Dielectric Pocket (VESIMOS-DP)
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:FACULTY > Faculty of Engineering
ID Code:12792
Deposited By:IR Admin
Deposited On:07 Mar 2016 13:31
Last Modified:07 Mar 2016 13:31

Repository Staff Only: item control page


Browse Repository
Collection
   Articles
   Book
   Speeches
   Thesis
   UMS News
Search
Quick Search

   Latest Repository

Link to other Malaysia University Institutional Repository

Malaysia University Institutional Repository