Ismail Saad, and Munawar Agus Riyadi, and Razali Ismail, and Vijay K. Arora, (2008) Self-aligned double-gate (DG) vertical MOSFET's using oblique rotating implantation (ORI) method with reduced parasitic capacitance. In: 2008 IEEE International Conference on Semiconductor Electronics (ICSE 2008), 25-27 November 2008, Johor, Malaysia.
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Official URL: http://dx.doi.org/10.1109/SMELEC.2008.4770398
Enhanced symmetrical self-aligned double-gate (DG) vertical nMOSFET with low parasitic capacitance is presented. The process utilizes the oblique rotating ion implantation (ORI) method combined with fillet local oxidation (FILOX) technology (FILOX + ORT). Self-aligned region forms a sharp vertical channel profile that increased the number of electrons in the channel. These have improved drive-on current and drain-induced-barrier-lowering (DIBL) effect with a reduced off-state leakage current tremendously. The gate-to-drain capacitance is significantly reduced while has a small difference of gate-to-source capacitance compared to FILOX device. The drain overlap capacitance is a factor of 0.2 lower and the source overlap capacitance is a factor of 1.5 lower than standard vertical MOSFETs. © 2008 IEEE.
|Item Type:||Conference Paper (UNSPECIFIED)|
|Uncontrolled Keywords:||Drain overlap, Drain-induced-barrier-lowering effects, Fillet local oxidations, Gate-to-drain capacitance, Low-parasitic, NMOSFET, Number of electrons, Off-state leakage current, On currents, Overlap capacitance, Parasitic capacitance, Self aligned double gates, Self-aligned, Vertical channels, Vertical MOSFET, Vertical MOSFETs|
|Subjects:||?? TK7800-8360 ??|
|Divisions:||SCHOOL > School of Engineering and Information Technology|
|Deposited By:||IR Admin|
|Deposited On:||25 Mar 2011 13:11|
|Last Modified:||30 Dec 2014 15:00|
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