Doping Concentrations Analysis on The Performance of Vertical S trained-SiGe Impact Ionization MOSFET Incorpo rating Dielectric Pocket (VESIM OS-DP)

Ismail Saad, and Mohd. Zuhir H, and Bun Seng C, and Khairul A.M, and Bablu Ghosh, and N. Bolong, and Razali Ismail, Doping Concentrations Analysis on The Performance of Vertical S trained-SiGe Impact Ionization MOSFET Incorpo rating Dielectric Pocket (VESIM OS-DP).

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Abstract

The Vertical Strained SiGe Impact Ionization MOSFET incorporating Dielectric Pocket (VESIMOS-DP) has been successfully developed and analyzed in this paper. The effect of doping concentration for both Source and Drain (S/D) as well as body doping concentration to the performance of VESIMOS-DP in terms of subthreshold slope (S), threshold voltage (V TH ) and drain current has been observed in this paper. An inverse proportional of S and VTH value was found when S/D doping concentration increased. It is notable that for S/D doping concentration above 1019 atoms/cm3 , there is a significant increase in S values which is not recommended as the switching speed getting higher distracting performance of the device. However, too low S/D doping concentration is not essential as it didn’t show any significant improvement on the performance of the device. It is also revealed that with low body doping concentration, the device suffers tremendous Parasitic Bipolar Transistor (PBT) effect that prevents the device from switched off. Thus, optimum doping concentration is imperative to obtain superb device characteristic. Due to the DP layer, a stable VTH =1.35V obtained due to the vicinity of DP layer near the drain end has reduced charge sharing between the source and drain. The slight different and consistency of VESIMOS-DP subthreshold value (S = 19 mV/dec) has given advantages for incorporating DP layer near the drain end. In many aspects, it is revealed that the incorporation of DP has enhanced the electrical performance and suppressed PBT effect of IMOS in the nanometer regime for future development of nanoelectronic device.

Item Type: Article
Uncontrolled Keywords: Dielectric Pocket; VESIMOS; VESIMOS-DP; Parasitic Bipolar Effects; nano-electronics; Strained
Subjects: T Technology > T Technology (General)
Divisions: FACULTY > Faculty of Engineering
Depositing User: MR OTHMAN HJ RAWI
Date Deposited: 19 Mar 2019 02:10
Last Modified: 19 Mar 2019 02:10
URI: http://eprints.ums.edu.my/id/eprint/21648

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