Ismail Saad, and Razak Mohd Ali Lee, and Razali Ismail, and Vijay K. Arora, (2009) Physics-based modelling of ballistic transport in nanoscale transistor. In: 2009 3rd Asia International Conference on Modelling and Simulation (AMS), 25-26 May 2009, Bandung, Indonesia.
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Official URL: http://dx.doi.org/10.1109/AMS.2009.46
The ballistic transport of the carriers is predicted when the channel length of the transistor is less than the scattering-limited mean-free path. In this paper, the saturation velocity is found to be ballistic regardless of the device dimensions. This saturation velocity is limited by the intrinsic velocity. Its does not sensitively depend on the ballistic or scatteringlimited nature of the mobility. In the degenerate realm, the saturation velocity is shown to be the Fermi velocity that is independent of temperature but strongly dependent on carrier concentration. In the non-degenerate realm, the intrinsic velocity is the thermal velocity that depends only on the ambient temperature. The drain carrier velocity is revealed to be smaller than the saturation velocity due to the presence of a finite electric field. An excellent agreement of the models developed and applied to 80-nm-channel-length MOSFET validates the physics behind ballistic transport. © 2009 IEEE.
|Item Type:||Conference Paper (UNSPECIFIED)|
|Uncontrolled Keywords:||Ambient temperatures, Ballistic transports, Carrier velocity, Channel length, Fermi velocities, Intrinsic velocity, Mean-free path, MOS-FET, NanoScale Transistors, Physics-based modelling, Saturation velocity, Thermal velocity Engineering controlled terms : Ballistics, Carrier concentration, Electric fields, Transport properties Engineering main heading : Velocity|
|Subjects:||?? TK7800-8360 ??|
|Divisions:||SCHOOL > School of Engineering and Information Technology|
|Deposited By:||IR Admin|
|Deposited On:||25 Mar 2011 15:23|
|Last Modified:||30 Dec 2014 14:35|
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