Photo Detector Junction properties and Dynamic Aptness Analysis – Computational Study

Bablu K. Ghosh, and Ismail Saad, and Khairul Anuar Mohamad, and A.Wong, and T. Kinchin, (2012) Photo Detector Junction properties and Dynamic Aptness Analysis – Computational Study. In: 2012 International Symposium on Computer Applications and Industrial Electronics (ISCAIE 2012), 3-4 December 2012, Kota Kinabalu, Sabah.

Full text not available from this repository.


As a lower band edge material application of Si photodiode as detector; reverse biasing impacts on its carrier drift or sensing speed, junction capacitance as well as its operating bandwidth. The variation of n-doping also ensures the variation of reverse breakdown voltage. In this paper we analyze the effect of n-doping profile (body doping) and the reverse voltage effect on Si photo device characteristic parameters such as depletion capacitance- junction width (JW), generation rate, operating bandwidth and gain as well. Whenever body doping concentration is increased it reduces the reverse break down voltage, as a result effective JW is decreased and capacitance is found to be increased consequently reduces the operating bandwidth and sensing speed.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: operating bandwidth, voltage effect, Si detector, doping profile, linear, generation rate, junction capacitance, speed, Si photo device
Subjects: Q Science > QA Mathematics > QA75 Electronic computers. Computer science
T Technology > TR Photography
Divisions: SCHOOL > School of Engineering and Information Technology
Date Deposited: 22 Jul 2013 06:43
Last Modified: 18 May 2015 04:07

Actions (login required)

View Item View Item

Browse Repository
   UMS News
Quick Search

   Latest Repository

Link to other Malaysia University Institutional Repository

Malaysia University Institutional Repository