Numerical Evaluation of Low-Dimensional Energy Spectrum and Carrier Statistics for Nanostructure Device Application

Ismail Saad, and Khairul Anuar Mohamad, and Nurmin Bolong, and Abu Bakar Abd Rahman, and Vijay K. Arora, (2012) Numerical Evaluation of Low-Dimensional Energy Spectrum and Carrier Statistics for Nanostructure Device Application. International Journal of Simulation Systems, Science & Technology, 13 (3B). pp. 45-51. ISSN 1473-8031

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Abstract

Numerical evaluation of energy spectrum and carrier statistics for nanostructure device application is presented. The low-dimensional energy spectrum was successfully derived for the respective quasi 3D, 2D and 1D system that invoked the effect of quantum confinement (QCE) comparable to the De Broglie wavelength (×’D =á·‰ 10nm). For non-degenerately (ND) doped samples the Fermi-Dirac (FD) integral is well approximated by Boltzmann statistics. However, in degenerate doped quasi 3D, 2D and 1D device, the FD integral is found to be approximated by order one-half, zero and minus one-half respectively. The Fermi energy is revealed to be a weak (logarithmic) function of carrier concentration, but varies linearly with temperature in the ND regime. However, for strongly degenerate statistics, the Fermi energy is independent of temperature and is a strong function of carrier concentration.

Item Type: Article
Uncontrolled Keywords: Energy spectrum, carrier statistics, nano-MOSFET, De Broglie wavelength, quantum confinement effect (QCE), nanowire
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: SCHOOL > School of Engineering and Information Technology
Depositing User: MDM SITI AZIZAH IDRIS
Date Deposited: 18 Sep 2013 04:11
Last Modified: 11 Oct 2017 06:49
URI: http://eprints.ums.edu.my/id/eprint/6972

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