Khairul Anuar Mohamad and Yoshihiro, Tada and Takefumi, Miura and Katsuhiro, Uesugi and Hisashi, Fukuda (2009) Carbon nanocrystal-based organic thin-film transistors for nonvolatile memory nanodevices. e-Journal of Surface Science and Nanotechnology, 7. pp. 665-668. ISSN 1348-0391
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Abstract
Organic semiconductor nonvolatile memory devices were successfully fabricated from organic thin-film transistors (OTFTs) embedded with nanocrystal carbon (nc-C) dots incorporating pentacene as an active layer. The nc-C dots were arranged in the channel region by a focused ion beam (FIB) technique using a precursor of low energy Ga+ ions and a carbon source. The formation and morphology of nc-C dot arrays were investigated using a scanning ion microscopy (SIM) and atomic force microscopy (AFM), respectively. The SIM and AFM images show that the nc-C dot array was successfully grown on the SiO 2 layer. The density of the two-dimensional nc-C dots was 5 x 10 9 cm-2. The current-voltage (I - V) characteristics at room temperature show that the fabricated OTFTs exhibit a memory effect upon the application of forward and reverse bias. Under the effect of gate bias, on and off states were induced and a threshold voltage shift (ΔVth = 0.23 V) was obtained. The charge carrier mobility (μ) of the OTFTs is similar in both on and off states. The memory effect was attributed to the nc-C dots in the pentacene-dielectric interface. © 2009 The Surface Science Society of Japan.
| Item Type: | Article |
|---|---|
| Keyword: | Atomic force microscop, Carbon, Focused ion beam, Nanocrystal |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK1-9971 Electrical engineering. Electronics. Nuclear engineering > TK7800-8360 Electronics |
| Department: | SCHOOL > School of Engineering and Information Technology |
| Depositing User: | ADMIN ADMIN |
| Date Deposited: | 16 Mar 2011 12:54 |
| Last Modified: | 19 Oct 2017 15:04 |
| URI: | https://eprints.ums.edu.my/id/eprint/1574 |
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