Ismail Saad and Razali Ismail (2008) Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method. Microelectronics Journal, 39 (12). pp. 1538-1541. ISSN 0026-2692
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Abstract
A process of making a symmetrical self-aligned n-type vertical double-gate MOSFET (n-VDGM) over a silicon pillar is revealed. This process utilizes the technique of oblique rotating ion implantation (ORI). The self-aligned region forms a sharp vertical channel profile and decreases the channel length Lg. A tremendous improvement in the drive-on current is noted. The electron concentration profile obtained demonstrates an increased number of electrons in the channel injected from the source end as the drain voltage increases. The enhanced carrier concentration results in significant reduction in the off-state leakage current and improves the drain-induced barrier-lowering (DIBL) effect. These simulated characteristics when compared to those in a fabricated device without the ORI method show the distinct advantage of the technique reported for suppression of short-channel effects (SCE) in nanoscale vertical MOSFET. © 2008 Elsevier Ltd. All rights reserved.
| Item Type: | Article |
|---|---|
| Keyword: | DIBL, Double-gate FET, Nanoscale MOSFET, Oblique rotating ion implant, Vertical MOSFET |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK1-9971 Electrical engineering. Electronics. Nuclear engineering > TK7800-8360 Electronics |
| Department: | SCHOOL > School of Engineering and Information Technology |
| Depositing User: | ADMIN ADMIN |
| Date Deposited: | 25 Mar 2011 10:49 |
| Last Modified: | 19 Oct 2017 15:26 |
| URI: | https://eprints.ums.edu.my/id/eprint/1617 |
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