Evaluation of static performance of optoelectronic semiconductor devices under X-rays irradiation

Abdul Amir, Haider F. and Chee, Fuei Pien (2011) Evaluation of static performance of optoelectronic semiconductor devices under X-rays irradiation. In: International Conference on X-ray and Related Techniques in Research and Industry (IXCRI 2010), 9-10 June 2010, Kedah, Malaysia.

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In this research, optoelectronic devices consisted of an infrared light emitting diode and a phototransistor with no special handling or third party-packaging were irradiated to ionizing radiation utilizing x-rays. It was found that the devices under test (DUTs) undergo performance degradation in their functional parameters during exposure to x-rays. These damaging effects are depending on their current drives and also the Total Ionizing Dose (TID) absorbed. The TID effects by x-rays are cumulative and gradually take place throughout the lifecycle of the devices exposed to radiation. © (2011) Trans Tech Publications, Switzerland.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Keyword: Optoelectronic, Total Ionizing Dose (TID), X-rays, Current drives, Damaging effects, Devices under tests, Functional parameters, Infrared light emitting diodes, Optoelectronic, Optoelectronic semiconductor devices, Performance degradation, Static performance, Third parties, Total ionizing dose
Subjects: T Technology > TA Engineering (General). Civil engineering (General) > TA1-2040 Engineering (General). Civil engineering (General) > TA1501-1820 Applied optics. Photonics
T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK1-9971 Electrical engineering. Electronics. Nuclear engineering > TK7800-8360 Electronics > TK8300-8360 Photoelectronic devices (General)
Department: SCHOOL > School of Science and Technology
Depositing User: ADMIN ADMIN
Date Deposited: 10 Mar 2011 12:35
Last Modified: 08 Sep 2014 15:24
URI: https://eprints.ums.edu.my/id/eprint/2157

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