Design and simulation analysis of nanoscale vertical MOSFET technology

Ismail Saad and Razak Mohd Ali Lee and Munawar Agus Riyadi and Razali Ismail (2009) Design and simulation analysis of nanoscale vertical MOSFET technology. In: 2009 IEEE Student Conference on Research and Development, SCOReD 2009, 16 November 2009 through 18 November 2009, Serdang, Selangor.

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Design consideration of vertical MOSFET with double gate structure on each side of insulating pillar for nanodevice applications is presented. The body doping effect on vertical channel for channel length, Lg = 50nm and analyzing its effect towards such small devices was successfully performed. The analysis continued with the comparative investigation of device performance with conventional planar MOSFET as scaling Lg down to 50nm. The final part evaluates the innovative design of incorporating dielectric pocket (DP) on top of vertical MOSFET turret with comprehensive device performance analysis as compared to standard vertical MOSFET in nanoscale realm. An optimized body doping for enhanced performance of vertical MOSFET was revealed. The vicinity of DP near the drain end is found to reduce the charge sharing effects between source and drain that gives better gate control of the depletion region for short channel effect (SCE) suppression in nanodevice structure. ©2009 IEEE.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Keyword: Dielectric pockets, Doping effect, Planar MOSFET, Short channel effect, Vertical MOSFET
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK1-9971 Electrical engineering. Electronics. Nuclear engineering > TK7800-8360 Electronics
Department: SCHOOL > School of Engineering and Information Technology
Depositing User: ADMIN ADMIN
Date Deposited: 21 Mar 2011 19:29
Last Modified: 30 Dec 2014 14:22

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