Optoelectronic properties comparison of 10 and 20 multi quantum wells Ga0.952In0.048N0.016As0.984/GaAs p-i-n photodetector for 1.0 µm wavelength

Megat Muhammad Ikhsan Megat Hasnan and M.S. Nordin and N. Nayan and K.A. Mohamad and N.F. Basri and A. Alias and Vicker, A.J. and I.M. Noor (2022) Optoelectronic properties comparison of 10 and 20 multi quantum wells Ga0.952In0.048N0.016As0.984/GaAs p-i-n photodetector for 1.0 µm wavelength. Optical Materials, 127. pp. 1-13. ISSN 0925-3467

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URL: https://www.sciencedirect.com/science/article/pii/...

Abstract

This study proves the addition of quantum wells to the intrinsic regions of p-i-n GaInNAs/GaAs has improved the performance of optoelectronic devices. The optoelectronic properties that contribute to the device's dark current and photocurrent need to be well understood to develop photo-response at longer wavelengths. This study reports an optoelectronic properties comparison of different quantum well number for Ga0.952In0.048N0.016As0.984/GaAs-based dilute nitride multi-quantum wells (MQWs) p-i-n photodetector devices. From photoluminescence (PL) analysis, 20 MQWs shows a higher PL peak than 10 MQWs. The maximum quantum efficiency (QE) is found to be 80.3% for 20 MQWs and 46% for 10 MQWs, where 20 MQWs being the highest QE value ever reported for GaInNAs-based MQWs photodetector. Current versus voltage (I–V) measurement shows that 20 MQWs produces lower dark current than 10 MQWs. Besides, 20 QWs sample produces a higher current density (−12.43 μAcm−2) than 10 MQWs (−7.52 μAcm−2) under illumination. Impedance spectroscopy analysis shows that a lower dark current of 20 MQWs is due to a high intrinsic resistivity and low dielectric loss peak compared to 10 MQWs. SimWindows simulation shows good correlation with responsivity analysis and impedance analysis where at −5 V, 20 MQWs produces higher responsivity (0.65AW-1) due to wider depletion region (deduce from conduction band profile) and lower intrinsic capacitance and dielectric loss (deduces from impedance analysis) than 10 MQWs (0.37AW-1). At room temperature, the detectivity (D*) of the 20 MQWs photodetector (7.12 × 1010 cmHz0.5W−1) is higher than 10 MQWS photodetector (4.89 × 1010 cmHz0.5W−1). Finally, the 20 MQWs's (4.02 × 10−11 WHz−0.5) has produces lower noise-equivalent power (NEP) than 10 MQWs (5.85 × 10−11 WHz−0.5). This study has successfully presenting an understanding of optoelectronic properties and simultaneously producing a sensitive photodetector with high quality, low-noise which is comparable with ∼1010 cmHz0.5W−1 of commercial III-V alloy based near-infrared GaAs-based photodetectors.

Item Type:	Article
Keyword:	Multi-quantum wells , Photodetector , Impedances , Dielectric , Quantum efficiency , Transient photoconductivity
Subjects:	Q Science > QC Physics > QC1-999 Physics
Department:	FACULTY > Faculty of Engineering
Depositing User:	SAFRUDIN BIN DARUN -
Date Deposited:	26 Jul 2022 15:39
Last Modified:	26 Jul 2022 15:39
URI:	https://eprints.ums.edu.my/id/eprint/33536

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