Investigation on effect of tilt angle ion implantations for vertical double gate MOSFET

A. R. Abu Bakar and Ismail Saad (2011) Investigation on effect of tilt angle ion implantations for vertical double gate MOSFET. In: 2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 201, 28-30 September 2011, Kota Kinabalu, Sabah, Malaysia.

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The significance of variation on tilt angle ion implantation for fabricating the Vertical MOSFET with ORI (Oblique Rotating Implantation) technique is investigated. For this purpose, the angle of the ion implantation for forming the source and drain region is varied from 0° to 80. Various effects on physical structure of the device and its corresponding electrical properties have been observed. The overall result promotes the optimal angle for the ion implantation of the Vertical Double Gate MOSFET (VDGM) structure is found to be remarkable at 45 with shorter channel length, Lg 45nm, lower sheet resistance RD 14.7, R S28.9 , high sub-threshold swing, SS 62mV/dec and high saturation current, I DSAt 1.04mA/m

Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: Channel length, High saturation current, Optimal angle, Physical structures, Source and drains, Subthreshold swing, Tilt angle, Vertical double gate, Vertical MOSFETs
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK1-9971 Electrical engineering. Electronics. Nuclear engineering > TK7800-8360 Electronics
Q Science > QC Physics > QC1-999 Physics > QC770-798 Nuclear and particle physics. Atomic energy. Radioactivity
Divisions: SCHOOL > School of Engineering and Information Technology
Depositing User: ADMIN ADMIN
Date Deposited: 30 Apr 2012 16:21
Last Modified: 08 Sep 2014 14:41

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