Items where Author is "H.M. Zuhir"

Article

Nurmin Bolong and H.M. Zuhir and Ismail Saad and C. Bun Seng and Pogaku, Ravindra (2014) In-depth design and simulation analysis of vertical strained impact ionization MOSFET (VESIMOS). International Journal of Simulation: Systems, Science & Technology, 15 (2). pp. 32-39.

Nurmin Bolong and Bablu K. Ghosh and U. Hashim and C. Bun Seng and Ismail Saad and H.M. Zuhir and Khairul Anuar Mohamad and Razhwan Ismail (2014) Breakdown voltage reduction analysis with adopting dual channel vertical strained sige impact ionization mosfet (VESIMOS). International Journal of Simulation: Systems, Science & Technology, 15 (2). pp. 40-45.

Conference or Workshop Item

Nurmin Bolong and Divya Pogaku and Khairul Anuar Mohamad and U. Hashim and H.M. Zuhir and Ismail Saad and Chan, Bun Seng and A R Abu Bakar (2013) Body doping analysis of vertical strained-SiGe Impact Ionization MOSFET incorporating dielectric pocket (VESIMOS-DP). In: Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium.

Nurmin Bolong and Ismail Saad and Khairul Anuar Mohamad and Bablu K. Ghosh and H.M. Zuhir and C Bun Seng and Razali Ismail and U. Hashim (2013) Performance analysis of single and dual channel vertical strained SiGe impact ionization MOSFET (VESIMOS). In: Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium.

Ismail Saad and H.M. Zuhir and Nurmin Bolong and Khairul Anuar Mohamad and Bablu K. Ghosh and Razali Ismail (2013) Mobility enhancement on Vertical Strained-SiGe Impact Ionization MOSFET incorporating Dielectric Pocket (VESIMOS-DP). In: TENCON 2013 - 2013 IEEE Region 10 Conference (31194).

Ismail Saad, and Nurmin Bolong, and H.M. Zuhir , and Khairul Anuar Mohamad, and D. Pogaku , and A.R.A. Bakar, (2012) Enhanced performance analysis of vertical strained-sigeimpact Ionization MOSFET (VESIMOS). In: Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference .

Ismail Saad and Nurmin Bolong and Khairul Anuar Mohamad and H.M. Zuhir and D. Pogaku and A.R.A. Bakar (2012) Investigation of incorporating dielectric pocket (DP) on Vertical Strained-SiGe Impact Ionization MOSFET (VESIMOS-DP). In: Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference.