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Items where Author is "Haider F. Abdul Amir , "
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S. Salleh and Haider F. Abdul Amir and A. Kumar Tiwari and Chee, Fuei Pien (2016) Collision cascade and spike effects of X-ray irradiation on optoelectronic devices. In: 2nd International Conference on Computational and Experimental Science and Engineering (ICCESEN 2015), 14-19 October 2015, Antalya, Turkey.
Haider F. Abdul Amir and Abdullah Chik and Chee, Fuei Pien (2009) Effects of total Dose irradiation on Semiconductor devices. (Unpublished)
Chee , Fuei Pien and Haider F. Abdul Amir , and Saafie Salleh (2011) Simulation of ionizing radiation induced effects in nanoscale semiconductor material. In: 2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011, 28-30 September 2011, Kota Kinabalu, Sabah.
Haider F. Abdul Amir and Saafie Salleh and Fuei, Pien Chee (2011) Monte Carlo simulation of nuclear radiation effects in Nanoscale Protonic materials. In: 9th Annual Seminar On Science And Technology, Courtyard Hotel. (Unpublished)
Abdullah Chik and Nazli Ahmad Aini and Haider F. Abdul Amir (2014) Physical characteristic of Zn doped soft ferrites MxZn 1-x Fe2O4. Key Engineering Materials, 594-59. pp. 39-43. ISSN 10139826
Abdullah Chik and Nazli Ahmad Aini and Haider F. Abdul Amir (2014) Physical characteristic of Zn doped soft ferrites MxZn 1-x Fe2O4. Key Engineering Materials, 594-59. pp. 39-43. ISSN 10139826
Saafie Salleh and Fuei, Pien Chee and Haider F. Abdul Amir (2016) Mechanism of bijunction semiconductor device damage induced by heavy particles. Jurnal Teknologi (Sciences and Engineering), 78 (2-2). pp. 115-120. ISSN 1279696
Haider F. Abdul Amir and Saafie Salleh and Abu Hassan Husin and Fuei, Pien Chee (2016) A model for neutron radiation damage in Metal Oxide Semiconductor (MOS) structures. Key Engineering Materials, 706. pp. 51-54. ISSN 10139826
Haider F. Abdul Amir and Afishah Alias and Abu Hassan Husin and Fuei, Pien Chee (2016) Calculation of the rate of helium ion dispersion in gallium arsenide compound. Key Engineering Materials, 705. pp. 179-185. ISSN 10139826