Items where Author is "Yoshifumi Ito"
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Bablu K. Ghosh and ToruTanikawa and Akihiro Hashimoto and Akio Yamamoto and Yoshifumi Ito (2003) Reduced-stress GaN epitaxial layers grown on Si(1 1 1) by using a porous GaN interlayer converted from GaAs. Journal of Crystal growth, 249 (3-4). pp. 422-428.