Yoshihiro, Tada and Khairul Anuar Mohamad and Katsuhiro, Uesugi and Hisashi, Fukuda (2010) Organic thin-film transistor memory with nanocrystal carbon dots. e-Journal of Surface Science and Nanotechnology, 8. pp. 250-253. ISSN 1348-0391
|
Text
Organic_thin.pdf Download (49kB) | Preview |
Abstract
Organic thin-film transistor (OTFT) memory devices were fabricated with nanocrystal carbon (nc-C) dots incorporated into the pentacene/oxide interface in the active layer. The nc-C dots were arranged precisely in order on the OTFT channel region by a focused ion beam (FIB) technique using low-energy Ga + ions and phenanthrene as the carbon source. The structural information of nc-C dot arrays was obtained by scanning ion microscopy (SIM) and atomic force microscopy (AFM). These images indicate that the nc-C dot array was successfully formed on the oxide layer. The density of the two-dimensional nc-C dots was 1.3-1.5×108 cm-2. The current-voltage (I-V ) characteristics showed that the OTFTs exhibit memory behavior upon the application of forward and reverse gate bias stresses. Depending on the polarity of gate bias, write and erase modes were induced, and a maximum threshold voltage shift ΔVth of 0.97 V was obtained. © The Surface Science Society of Japan.
| Item Type: | Article |
|---|---|
| Keyword: | Focused ion beam, Nanocrystal, Organic thin-film transistor, Pentacene |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK1-9971 Electrical engineering. Electronics. Nuclear engineering > TK7800-8360 Electronics |
| Department: | SCHOOL > School of Engineering and Information Technology |
| Depositing User: | ADMIN ADMIN |
| Date Deposited: | 08 Mar 2011 14:53 |
| Last Modified: | 13 Oct 2017 09:40 |
| URI: | https://eprints.ums.edu.my/id/eprint/2109 |
Actions (login required)
 |
View Item |