High-k gate dielectric nano-FET leakage current analysis

Bunseng, Chan and Charlie Soh and Kang, Eng Siew and Hui, Seng Kheong and Lim, Wei Jer and Ismail Saad and Nurmin Bolong (2021) High-k gate dielectric nano-FET leakage current analysis.

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This paper reveals the use of high-k dielectric material to mitigate the subthreshold leakage current. The feature size of conventional MOSFET using SiO2 has approached their physical limits where the oxide thickness should not reach below 2nm due to high leakage current and the tunnelling increase drastically. Therefore, it is difficult to scale down the size of the MOSFET meanwhile improve its performance. Instead of reducing the size of the transistor, it can make the changes to the parameter, such as the channel length, oxide thickness, and channel width. However, these may affect the performance of the device. Hence, the replacement of SiO2 with other high-k dielectric material has been analyzed. The material used in the analysis including SiO2, Al2O3, HfO2, Ta2O5, and La2O3. The characteristic of subthreshold leakage current was tested through simulation using MATLAB. La2O3 as dielectric material shows a good refinement on mitigating the subthreshold leakage current by 87% compared to SiO2.

Item Type: Proceedings
Keyword: La2O3 , High-k dielectric , Leakage current , MOSFET modelling , Nano-FET
Subjects: T Technology > TA Engineering (General). Civil engineering (General) > TA1-2040 Engineering (General). Civil engineering (General)
T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK1-9971 Electrical engineering. Electronics. Nuclear engineering
Department: FACULTY > Faculty of Engineering
Depositing User: DG MASNIAH AHMAD -
Date Deposited: 08 Jun 2022 09:24
Last Modified: 08 Jun 2022 09:24
URI: https://eprints.ums.edu.my/id/eprint/32713

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