X-Ray Spectral Investigation of Silicon-Ligand Bond in Si(OC₂H₅)₄, Si(C₆H₅)₄ and (OH) ₂Si(C₆H₅)₂ Compounds

Maryati Mohamed, Datin and S., David Urch (1997) X-Ray Spectral Investigation of Silicon-Ligand Bond in Si(OC₂H₅)₄, Si(C₆H₅)₄ and (OH) ₂Si(C₆H₅)₂ Compounds. Journal of the Indian Chemical Society, 74 (3). pp. 174-175. ISSN 00194522

[img]
Preview
Text
X.pdf

Download (848kB) | Preview

Abstract

X-Ray photoelectron and X-ray emission spectra (SiKα�₂, and SiKβ�,₃) of the titled silicon compounds are studied. These spectra reveal only σ-bonding in case of Si(OC₂H₅)₄ between silicon and ligand, but in case of Si(OC₂H₅)₄ and (OH) ₂Si(C₆H₅)₂, both σ- and π-bonding have been exhibited. The observation is discussed in terms of simple molecular orbital theory. The SiK β emission spectrum of (OH) ₂Si(C₆H₅)₂ shows that the compound suffers a decomposition due to heat produced during X-ray bombardment.

Item Type: Article
Keyword: Spectral Investigation, Silicon-Ligand Bond
Subjects: Q Science > QC Physics > QC1-999 Physics > QC770-798 Nuclear and particle physics. Atomic energy. Radioactivity
Q Science > QD Chemistry > QD1-999 Chemistry > QD146-197 Inorganic chemistry
Department: INSTITUTE > Institute for Tropical Biology and Conservation
Depositing User: ADMIN ADMIN
Date Deposited: 31 Jan 2012 11:21
Last Modified: 16 Oct 2017 14:29
URI: https://eprints.ums.edu.my/id/eprint/3404

Actions (login required)

View Item View Item