Maryati Mohamed, Datin and S., David Urch (1997) X-Ray Spectral Investigation of Silicon-Ligand Bond in Si(OC₂H₅)₄, Si(C₆H₅)₄ and (OH) ₂Si(C₆H₅)₂ Compounds. Journal of the Indian Chemical Society, 74 (3). pp. 174-175. ISSN 00194522
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Abstract
X-Ray photoelectron and X-ray emission spectra (SiKα�₂, and SiKβ�,₃) of the titled silicon compounds are studied. These spectra reveal only σ-bonding in case of Si(OC₂H₅)₄ between silicon and ligand, but in case of Si(OC₂H₅)₄ and (OH) ₂Si(C₆H₅)₂, both σ- and π-bonding have been exhibited. The observation is discussed in terms of simple molecular orbital theory. The SiK β emission spectrum of (OH) ₂Si(C₆H₅)₂ shows that the compound suffers a decomposition due to heat produced during X-ray bombardment.
Item Type: | Article |
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Keyword: | Spectral Investigation, Silicon-Ligand Bond |
Subjects: | Q Science > QC Physics > QC1-999 Physics > QC770-798 Nuclear and particle physics. Atomic energy. Radioactivity Q Science > QD Chemistry > QD1-999 Chemistry > QD146-197 Inorganic chemistry |
Department: | INSTITUTE > Institute for Tropical Biology and Conservation |
Depositing User: | ADMIN ADMIN |
Date Deposited: | 31 Jan 2012 11:21 |
Last Modified: | 16 Oct 2017 14:29 |
URI: | https://eprints.ums.edu.my/id/eprint/3404 |
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