Impedance spectroscopy study of dilute nitride p-i-n diode with multiple quantum wells

Nur Fadzilah Basri and M. M. Ikhsan M. Hasnan and Mohammad Syahmi Nordin and Khairul Anuar Mohamad and Afishah Alias (2022) Impedance spectroscopy study of dilute nitride p-i-n diode with multiple quantum wells.

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Official URL: https://oer.ums.edu.my/handle/oer_source_files/244...

Abstract

Dilute nitride p-i-n diode with ten multiple quantum wells (MQWs) were grown using molecular beam epitaxy (MBE) to investigate the capacitance properties under reverse bias voltages. The conventional capacitance-voltage (C-V) profiling technique is very useful for a bulk system but challenging for a system with multiple quantum wells. Impedance spectroscopy analysis is advantageous for quantum wells because it can discriminate between layers. Equivalent circuit parameters extracted from impedance spectroscopy analysis reveal that capacitance at a bias voltage of -1.0 V exhibits the highest capacitance value of 239 µF compared to other bias voltages. The p-in diode charge storage ability is at its highest at this voltage.

Item Type:	Proceedings
Keyword:	Impedance spectroscopy, Multiple quantum wells, MQWs, dilute-nitride
Subjects:	Q Science > Q Science (General) > Q1-390 Science (General) Q Science > QD Chemistry > QD1-999 Chemistry > QD1-65 General Including alchemy
Department:	CENTRE > Preparation Centre for Science and Technology
Depositing User:	SITI AZIZAH BINTI IDRIS -
Date Deposited:	10 Oct 2024 16:09
Last Modified:	10 Oct 2024 16:09
URI:	https://eprints.ums.edu.my/id/eprint/41277

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