Bablu K. Ghosh and Ismail Saad and Khairul Anuar Mohamad and A.Wong and T. Kinchin (2012) Photo Detector Junction properties and Dynamic Aptness Analysis – Computational Study. In: 2012 International Symposium on Computer Applications and Industrial Electronics (ISCAIE 2012), 3-4 December 2012, Kota Kinabalu, Sabah.
Full text not available from this repository.Abstract
As a lower band edge material application of Si photodiode as detector; reverse biasing impacts on its carrier drift or sensing speed, junction capacitance as well as its operating bandwidth. The variation of n-doping also ensures the variation of reverse breakdown voltage. In this paper we analyze the effect of n-doping profile (body doping) and the reverse voltage effect on Si photo device characteristic parameters such as depletion capacitance- junction width (JW), generation rate, operating bandwidth and gain as well. Whenever body doping concentration is increased it reduces the reverse break down voltage, as a result effective JW is decreased and capacitance is found to be increased consequently reduces the operating bandwidth and sensing speed.
| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Keyword: | operating bandwidth, voltage effect, Si detector, doping profile, linear, generation rate, junction capacitance, speed, Si photo device |
| Subjects: | ?? QA75 ?? T Technology > TR Photography |
| Department: | SCHOOL > School of Engineering and Information Technology |
| Depositing User: | SITI AZIZAH BINTI IDRIS - |
| Date Deposited: | 22 Jul 2013 14:43 |
| Last Modified: | 18 May 2015 12:07 |
| URI: | https://eprints.ums.edu.my/id/eprint/6611 |
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