Photo Detector Junction properties and Dynamic Aptness Analysis – Computational Study

Bablu K. Ghosh and Ismail Saad and Khairul Anuar Mohamad and A.Wong and T. Kinchin (2012) Photo Detector Junction properties and Dynamic Aptness Analysis – Computational Study. In: 2012 International Symposium on Computer Applications and Industrial Electronics (ISCAIE 2012), 3-4 December 2012, Kota Kinabalu, Sabah.

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As a lower band edge material application of Si photodiode as detector; reverse biasing impacts on its carrier drift or sensing speed, junction capacitance as well as its operating bandwidth. The variation of n-doping also ensures the variation of reverse breakdown voltage. In this paper we analyze the effect of n-doping profile (body doping) and the reverse voltage effect on Si photo device characteristic parameters such as depletion capacitance- junction width (JW), generation rate, operating bandwidth and gain as well. Whenever body doping concentration is increased it reduces the reverse break down voltage, as a result effective JW is decreased and capacitance is found to be increased consequently reduces the operating bandwidth and sensing speed.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: operating bandwidth, voltage effect, Si detector, doping profile, linear, generation rate, junction capacitance, speed, Si photo device
Subjects: ?? QA75 ??
T Technology > TR Photography
Divisions: SCHOOL > School of Engineering and Information Technology
Date Deposited: 22 Jul 2013 14:43
Last Modified: 18 May 2015 12:07

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