Ismail Saad and Khairul Anuar Mohamad and Nurmin Bolong and Abu Bakar Abd Rahman and Vijay K. Arora (2012) Numerical Evaluation of Low-Dimensional Energy Spectrum and Carrier Statistics for Nanostructure Device Application. International Journal of Simulation Systems, Science & Technology, 13 (3B). pp. 45-51. ISSN 1473-8031
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Abstract
Numerical evaluation of energy spectrum and carrier statistics for nanostructure device application is presented. The low-dimensional energy spectrum was successfully derived for the respective quasi 3D, 2D and 1D system that invoked the effect of quantum confinement (QCE) comparable to the De Broglie wavelength (×’D =á·‰ 10nm). For non-degenerately (ND) doped samples the Fermi-Dirac (FD) integral is well approximated by Boltzmann statistics. However, in degenerate doped quasi 3D, 2D and 1D device, the FD integral is found to be approximated by order one-half, zero and minus one-half respectively. The Fermi energy is revealed to be a weak (logarithmic) function of carrier concentration, but varies linearly with temperature in the ND regime. However, for strongly degenerate statistics, the Fermi energy is independent of temperature and is a strong function of carrier concentration.
| Item Type: | Article |
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| Keyword: | Energy spectrum, carrier statistics, nano-MOSFET, De Broglie wavelength, quantum confinement effect (QCE), nanowire |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Department: | SCHOOL > School of Engineering and Information Technology |
| Depositing User: | SITI AZIZAH BINTI IDRIS - |
| Date Deposited: | 18 Sep 2013 12:11 |
| Last Modified: | 11 Oct 2017 14:49 |
| URI: | https://eprints.ums.edu.my/id/eprint/6972 |
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