Haider F. Abdul Amir and Saafie Salleh and Fuei, Pien Chee (2011) Monte Carlo simulation of nuclear radiation effects in Nanoscale Protonic materials. In: 9th Annual Seminar On Science And Technology, Courtyard Hotel. (Unpublished)
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Abstract
Study for penetration of nuclear radiation into semiconductor materials had been of theoretical interest and of practical important in these recent years, driven by the need to control material properties at nanoscale. Gallium Arsenide (GaAs) is a basic photonic material for most of the space technology communication, and, therefore, lends itself for applications where this is of concern. In this paper, the damage evolution due to Gamma (y) rays is being simulated in nanoscale GaAs layer using SRJM (Stopping and Range of Ions in Matter). TRIM (The Range of Ions in Matter) calculation is also used to simulate the amount of nuclear energy deposited in the collisions and recoil events. Besides, we also compared the radiation tolerance between the conventional scale and nanoscale GaAs layer. From the findings, it is obsen~ed that most of the damage formed in the GaAs layer induced by the nuclear radiations is caused by the creation of Frenkel defect. This is due to energy transferred by the energetic ion or recoiling target to the lattice atom is higher than its displacement energy. However, when the GaAs layer is scaled down (nanoscaling), it is found that the GaAs layer can withstand higher radiation energy, in term of displacement damage. The total amount of disorder and the distribution in the depth are highly depending on the ion species and their energy.
| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
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| Keyword: | nanoscale, Gallium Arsenide (GaAs), Frenkel defect |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Depositing User: | MDM FAUZIAH MATSIN |
| Date Deposited: | 09 Jul 2014 09:54 |
| Last Modified: | 09 Nov 2017 15:57 |
| URI: | https://eprints.ums.edu.my/id/eprint/8959 |
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